APD Avalanche Photodiode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage, the higher the gain.

APD Avalanche Photodiode (APD) applicability and usefulness depends on many parameters. Two of the larger factors are: quantum efficiency, which indicates how well incident optical photons are absorbed and then used to generate primary charge carriers; and total leakage current, which is the sum of the dark current and photocurrent and noise. Electronic dark noise components are series and parallel noise. Series noise, which is the effect of shot noise, is basically proportional to the APD capacitance while the parallel noise is associated with the fluctuations of the APD bulk and surface dark currents. Another noise source is the excess noise factor, ENF. It describes the statistical noise that is inherent with the stochastic APD multiplication process. This is not to be confused with the fano noise (F), which describes the fluctuation of the total electric charge collected in the APD.

The global InGaAs Avalanche Photodiodes (InGaAs-APDs) market was valued at US$ 89 million in 2022 and is anticipated to reach US$ 150.2 million by 2029, witnessing a CAGR of 7.6% during the forecast period 2023-2029. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

Global APD Avalanche Photodiode key players include First-sensor, Luna, Hamamatsu, etc. Global top three manufacturers hold a share over 45%.

Europe is the largest market, with a share about 35%, followed by Japan, and North America, both have a share over 45 percent.

In terms of product, Si APD is the largest segment, with a share over 50%. And in terms of application, the largest application is Mobility, followed by Industrial, etc.

Report Scope

This report aims to provide a comprehensive presentation of the global market for InGaAs Avalanche Photodiodes (InGaAs-APDs), with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding InGaAs Avalanche Photodiodes (InGaAs-APDs).

The InGaAs Avalanche Photodiodes (InGaAs-APDs) market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2022 as the base year, with history and forecast data for the period from 2018 to 2029. This report segments the global InGaAs Avalanche Photodiodes (InGaAs-APDs) market comprehensively. Regional market sizes, concerning products by type, by application and by players, are also provided.

For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.

The report will help the InGaAs Avalanche Photodiodes (InGaAs-APDs) manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by type, by application, and by regions.


By Company


Hamamatsu Photonics

OSI Optoelectronics

Albis Optoelectronics AG (Enablence)

First Sensor

AMS Technologies AG

Luna Optoelectronics

Excelitas Technologies

Laser Components DG, Inc.

Kyosemi Corporation


Segment by Type


1100 To 1700 nm

1000 To 1600 nm


Segment by Application


Industrial

Medical

Electronic

Others


Production by Region



North America

Europe

China

Japan

South Korea

Taiwan


Consumption by Region


North America

U.S.

Canada

Europe

Germany

France

U.K.

Italy

Russia

Asia-Pacific

China

Japan

South Korea

China Taiwan

Southeast Asia

India

Latin America

Mexico

Brazil

Core Chapters

Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by type, by application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.

Chapter 2: Detailed analysis of InGaAs Avalanche Photodiodes (InGaAs-APDs) manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.

Chapter 3: Production/output, value of InGaAs Avalanche Photodiodes (InGaAs-APDs) by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.

Chapter 4: Consumption of InGaAs Avalanche Photodiodes (InGaAs-APDs) in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.

Chapter 5: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.

Chapter 6: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.

Chapter 7: Provides profiles of key players, introducing the basic situation of the key companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.

Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.

Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.

Chapter 10: The main points and conclusions of the report.